[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Vth-tunable CMIS platform with high-k gate dielectrics and variability effect for 45nm node
Hayashi,, Mizutani, M., Inoue, M., Yugami, J., Tsuchimoto, J., Anma, M., Komori, S., Tsukamoto, K., Tsukamoto, Y., Nii, K., Nishida, Y., Sayama, H., Yamashita, T., Oda, H., Eimori, T., Ohji, Y.Année:
2005
Langue:
english
DOI:
10.1109/iedm.2005.1609505
Fichier:
PDF, 857 KB
english, 2005