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Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
Portavoce, A., Kammler, M., Hull, R., Reuter, M. C., Copel, M., Ross, F. M.Volume:
70
Langue:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.70.195306
Date:
November, 2004
Fichier:
PDF, 678 KB
english, 2004