Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics
Carnez, B., Cappy, A., Kaszynski, A., Constant, E., Salmer, G.Volume:
51
Année:
1980
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.327292
Fichier:
PDF, 639 KB
english, 1980