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Concentration profiles and electrical characterization of high energy phosphorus implants in 〈100〉 silicon
G. Galvagno, A. Cacciato, F. Benyaïch, V. Raineri, F. Priolo, E. Rimini, S. Capizzi, P. RomanoVolume:
10
Année:
1991
Langue:
english
Pages:
7
DOI:
10.1016/0921-5107(91)90096-e
Fichier:
PDF, 558 KB
english, 1991