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The improvement of retention time of metal-ferroelectric (PbZr[sub 0.53]Ti[sub 0.47]O[sub 3])-insulator (Y[sub 2]O[sub 3])-semiconductor transistors by surface treatments
Shih, Wen-chieh, Kang, Kun-yung, Lee, Joseph Ya-minVolume:
91
Année:
2007
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2822809
Fichier:
PDF, 343 KB
english, 2007