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A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G., Künzel, H., Dortmann, G.Volume:
74
Année:
1993
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.355002
Fichier:
PDF, 1.89 MB
english, 1993