Influence of polysilicon gate formation conditions on thin gate oxide (4–6 nm) dielectric and charging properties
Itsumi, Manabu, Shiono, Noboru, Shimaya, MasakazuVolume:
73
Année:
1993
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.353999
Fichier:
PDF, 700 KB
english, 1993