High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
LeBeau, James M., Jur, Jesse S., Lichtenwalner, Daniel J., Craft, H. Spalding, Maria, Jon-Paul, Kingon, Angus I., Klenov, Dmitri O., Cagnon, Joël, Stemmer, SusanneVolume:
92
Année:
2008
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2901036
Fichier:
PDF, 698 KB
english, 2008