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Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers
Lee, Sanghwa, Choe, Hyeokmin, Oh, Taegeon, Jean, Jai Weon, Shin, Boa, Sohn, Yuri, Kim, Chinkyo, Choi, Jaewan, Moon, Yong-Tae, Lee, Jeong SooVolume:
90
Année:
2007
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2721401
Fichier:
PDF, 499 KB
english, 2007