Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy
Masahara, Meishoku, Hosokawa, Shinichi, Matsukawa, Takashi, Endo, Kazuhiko, Naitou, Yuuichi, Tanoue, Hisao, Suzuki, EiichiVolume:
85
Année:
2004
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1812571
Fichier:
PDF, 448 KB
english, 2004