Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 2
Mechanism of V[sub FB]/V[sub TH] shift in Dysprosium incorporated HfO[sub 2] gate dielectric n-Type Metal-Oxide-Semiconductor devices
Lee, Tackhwi, Choi, Kisik, Ando, Takashi, Park, Dae-Gyu, Gribelyuk, Michael A., Kwon, Unoh, Banerjee, Sanjay K.Volume:
29
Année:
2011
Langue:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3562974
Fichier:
PDF, 1.00 MB
english, 2011