
[IEEE 2012 IEEE International Conference on IC Design & Technology (ICICDT) - Austin, TX, USA (2012.05.30-2012.06.1)] 2012 IEEE International Conference on IC Design & Technology - A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance
Clerc, Sylvain, Abouzeid, Fady, Gasiot, Gilles, Gauthier, David, Soussan, Dimitri, Roche, PhilippeAnnée:
2012
Langue:
english
DOI:
10.1109/icicdt.2012.6232860
Fichier:
PDF, 2.21 MB
english, 2012