[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - Experimental analysis of gate oxide degradation-existence of neutral trap precursor, single and multiple trap-assisted-tunneling for SILC mechanism
Yamada, R., Yugami, J., Ohkura, M.Année:
2000
Langue:
english
DOI:
10.1109/relphy.2000.843892
Fichier:
PDF, 586 KB
english, 2000