[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
Franco, J., Alian, A., Kaczer, B., Lin, D., Ivanov, T., Pourghaderi, A., Martens, K., Mols, Y., Zhou, D., Waldron, N., Sioncke, S., Kauerauf, T., Collaert, N., Thean, A., Heyns, M., Groeseneken, G.Année:
2014
Langue:
english
DOI:
10.1109/irps.2014.6861098
Fichier:
PDF, 809 KB
english, 2014