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[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology
Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J., Rodwell, Mark, Griffith, Z, Urteaga, M, Bartsch, S. T., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W.K.Année:
2010
Langue:
english
DOI:
10.1109/drc.2010.5551887
Fichier:
PDF, 895 KB
english, 2010