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Effect of low temperature Ge seed layer and post thermal annealing on quality of Ge1−xSix(0.05 ≤x≤ 0.1) graded buffer layers by UHV-CVD
Chi-Lang Nguyen,Nguyen Hong Quan,Binh-Tinh Tran…Volume:
10
Langue:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-014-4016-7
Date:
July, 2014
Fichier:
PDF, 477 KB
english, 2014