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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Analysis on device structures for next generation IGBT
Onishi, Y., Momota, S., Kondo, Y., Otsuki, M., Kumagai, N., Sakurai, K.Année:
1998
Langue:
english
DOI:
10.1109/ispsd.1998.702640
Fichier:
PDF, 335 KB
english, 1998