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[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Design criteria for shoot-through elimination in Trench Field Plate Power MOSFET
Nishiwaki, Tatsuya, Hara, Takuma, Kaganoi, Keisuke, Yokota, Makoto, Hokomoto, Yoshitaka, Kawaguchi, YusukeAnnée:
2014
Langue:
english
DOI:
10.1109/ispsd.2014.6856056
Fichier:
PDF, 955 KB
english, 2014