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[IEEE 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur, Malaysia (2014.8.27-2014.8.29)] 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) - Quantum ballistic simulation study of InGaAs/InAs/InGaAs quantum well MOSFET: Effects of doping and physical device parameters
Biswas, Sudipta Romen, Datta, Kanak, Rahman, Ehsanur, Shadman, Abir, Khosru, Quazi D. M.Année:
2014
Langue:
english
DOI:
10.1109/smelec.2014.6920789
Fichier:
PDF, 3.19 MB
english, 2014