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Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory
Kim, Yong Jun, Kang, Jun Geun, Lee, Byungin, Cho, Gyu-Seog, Park, Sung-Kye, Choi, Woo YoungVolume:
53
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/jjap.53.04ed12
Date:
January, 2014
Fichier:
PDF, 1.88 MB
english, 2014