Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2006 Vol. 251; Iss. 1
Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique
J. Romanek, D. Grambole, F. Herrmann, M. Voelskow, M. Posselt, W. Skorupa, J. ŻukVolume:
251
Année:
2006
Langue:
english
Pages:
9
DOI:
10.1016/j.nimb.2006.06.005
Fichier:
PDF, 326 KB
english, 2006