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[IEEE 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers - Hsinchu, Taiwan (18-20 April 2001)] 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) - Demonstration of a flash memory cell with 55 Å EOT silicon nitride tunnel dielectric
Melik-Martirosian, A., Ma, T.P., Wang, X.W., Guo, X., Widdershoven, F.P., Wolters, D.R., van der Wal, V.J.D., van Duuren, M.J.Année:
2001
Langue:
english
DOI:
10.1109/vtsa.2001.934502
Fichier:
PDF, 241 KB
english, 2001