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[IEEE 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC) - Kyoto, Japan (2010.09.26-2010.09.30)] 22nd IEEE International Semiconductor Laser Conference - Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE
Hossain, Nadir, Jin, Shirong R., Sweeney, Stephen J., Liebich, Sven, Ludewig, Peter, Zimprich, Martin, Kunert, Bernardette, Volz, Kerstin, Stolz, WolfgangAnnée:
2010
Langue:
english
DOI:
10.1109/islc.2010.5642727
Fichier:
PDF, 118 KB
english, 2010