[IEEE 2009 10th International Symposium on Quality of Electronic Design (ISQED) - San Jose, CA, USA (2009.03.16-2009.03.18)] 2009 10th International Symposium on Quality of Electronic Design - New word-line driving scheme for suppressing oxide-tunneling leakage in sub-65-nm SRAMs
Bong, Ji-Hye, Kwon, Yong-Jin, Min, Kyeong-Sik, Kang, Sung-MoAnnée:
2009
Langue:
english
DOI:
10.1109/isqed.2009.4810338
Fichier:
PDF, 196 KB
english, 2009