[IEEE 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (15-19 Feb. 2004)] 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) - A 0.18 μm 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)
Woo Yeong Cho,, Beak-hyung Cho,, Byung-gil Choi,, Hyung-rok Oh,, Sang-beom Kang,, Ki-sung Kim,, Kyung-hee Kim,, Du-eung Kim,, Choong-keun Kwak,, Hyun-geun Byun,, Young-nam Hwang,, Su-jin AhAnnée:
2004
Langue:
english
DOI:
10.1109/isscc.2004.1332583
Fichier:
PDF, 953 KB
english, 2004
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