[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching
Wang, Maojun, Wang, Ye, Zhang, Chuan, Wen, Cheng P., Wang, Jinyan, Hao, Yilong, Wu, Wengang, Shen, Bo, Chen, Kevin J.Année:
2014
Langue:
english
DOI:
10.1109/ispsd.2014.6856024
Fichier:
PDF, 832 KB
english, 2014