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[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process
Song, Yi, Zhou, Huajie, Xu, Qiuxia, Luo, Jun, Zhao, Chao, Liang, QingqingAnnée:
2011
Langue:
english
DOI:
10.1109/drc.2011.5994423
Fichier:
PDF, 817 KB
english, 2011