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[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth
Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Baraskar, Ashish K., Cagnon, Joel, Thibeault, Brian, Gossard, Arthur C., Stemmer, Susanne, Rodwell, Mark J.W., Eunji Kim,, Byungha Shin,, McIntAnnée:
2009
Langue:
english
DOI:
10.1109/iciprm.2009.5012456
Fichier:
PDF, 418 KB
english, 2009