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[IEEE 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Monterey, CA, USA (Feb 12-16 2006)] 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode
Dae-Hwan Kang,, In Ho Kim,, Jeung-hyun Jeong,, Byung-ki Cheong,, Dong-Ho Ahn,, Ki-Bum Kim,Année:
2006
Langue:
english
DOI:
10.1109/.2006.1629508
Fichier:
PDF, 553 KB
english, 2006