
[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Analytical model for an extended field plate effect on trench LDMOS with high-k permittivity
Xiarong Hu,, Bo Zhang,, Xiaorong Luo,, Yongheng Jiang,, Kun Zhou,, Zhaoji Li,Année:
2013
Langue:
english
DOI:
10.1109/edssc.2013.6628106
Fichier:
PDF, 714 KB
english, 2013