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[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric
Zhang, Z.B., Song, S.C., Huffman, C., Barnett, J., Moumen, N., Alshareef, H., Majhi, P., Hussain, M., Akbar, M.S., Sim, J.H., Bae, S.H., Sassman, B., Lee, B.H.Année:
2005
Langue:
english
DOI:
10.1109/.2005.1469208
Fichier:
PDF, 474 KB
english, 2005