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[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Aggressive design of ultra-shallow junction for near-scaling-limit bulk planar CMOS by using raised source/drain extension structure and carbon co-implantion technology
Uejima, K., Yako, K., Yamamoto, T., Ikarashi, N., Shishiguchi, S., Hase, T., Hane, M.Année:
2010
Langue:
english
DOI:
10.1109/iwjt.2010.5474969
Fichier:
PDF, 1.30 MB
english, 2010