[IEEE 2012 13th International Symposium on Quality Electronic Design (ISQED) - Santa Clara, CA, USA (2012.03.19-2012.03.21)] Thirteenth International Symposium on Quality Electronic Design (ISQED) - Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis
Huang, Xin, Zhang, Tianwei, Wang, Rusheng, Liu, Changze, Liu, Yuchao, Huang, RuAnnée:
2012
Langue:
english
DOI:
10.1109/isqed.2012.6187572
Fichier:
PDF, 224 KB
english, 2012