
[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
Huolin Huang,, Liang, Yung C., Samudra, Ganesh S.Année:
2012
DOI:
10.1109/edssc.2012.6482860
Fichier:
PDF, 599 KB
2012