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[IEEE SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Cambridge, MA, USA (8-10 Sept. 1997)] SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest - Modeling the effect of carbon on boron diffusion
Rucker, H., Heinemann, B., Ropke, W., Fischer, G., Lippert, G., Osten, H.J., Kurps, R.Année:
1997
Langue:
english
DOI:
10.1109/sispad.1997.621392
Fichier:
PDF, 395 KB
english, 1997