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[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Characteristics of subband current ratio in double-gate MOSFET
Haijun Lou,, Xinnan Lin,, Lining Zhang,, Xukai Zhang,, Jiaojiao Xu,, Wen Wu,, Zhiwei Liu,, Wenping Wang,, Wei Zhao,, Yong Ma,, He, Frank, Mansun Chan,Année:
2010
Langue:
english
DOI:
10.1109/edssc.2010.5713686
Fichier:
PDF, 869 KB
english, 2010