[IEEE 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (2006.7.3-2006.7.3)] 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Twin-GD: A New Twin Gated-Diode Measurement for the Interface Characterization of Ultra-Thin Gate Oxide MOSFET's with EOT Down to 1nm
Lee, G., Chung, S., Mao, A., Lin, W., Yang, C., Hsieh, Y., Chu, K., Cheng, L., Tai, H., Hsu, L., Lee, C., Meng, H., Tsai, C., Ma, G., Chien, S., Sun, S.Année:
2006
Langue:
english
DOI:
10.1109/ipfa.2006.250992
Fichier:
PDF, 3.78 MB
english, 2006
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