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[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - Diffusion and activation of Boron and Phosphorus in preamorphized and crystalline Germanium using ultra fast spike anneal
Mazzocchi, V., Pages, X., Py, M., Barnes, J P, Vanormelingen, K., Hutin, L., Truche, R., Vermont, P., Vinet, M., Le Royer, C., Yckache, K.Année:
2009
Langue:
english
DOI:
10.1109/rtp.2009.5373459
Fichier:
PDF, 455 KB
english, 2009