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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - 200V Super Junction MOSFET Fabricated by High Aspect Ratio Trench Filling
Yamauchi, S., Shibata, T., Nogami, S., Yamaoka, T., Hattori, Y., Yamaguchi, H.Année:
2006
Langue:
english
DOI:
10.1109/ispsd.2006.1666072
Fichier:
PDF, 3.32 MB
english, 2006