
[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - Process and device related scaling considerations for polysilicon emitter bipolar transistors
Schaber, H., Bieger, J., Meister, T.F., Ehinger, K., Kakoschke, R.Année:
1987
Langue:
english
DOI:
10.1109/IEDM.1987.191379
Fichier:
PDF, 653 KB
english, 1987