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Characteristics of Ferroelectric Gate Transistor Using Nd 2 Ti 2 O 7 /HfO 2 /Si Structures
KIM, WOO SIK, LEE, CHANG KI, YANG, JUN-KYU, PARK, HYUNG-HOVolume:
64
Langue:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584580490894690
Date:
January, 2004
Fichier:
PDF, 217 KB
english, 2004