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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - A novel high power bipolar transistor in 4H-SiC
Zhao, J.H., Li, X., Fursin, L., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G.Année:
2001
Langue:
english
DOI:
10.1109/isdrs.2001.984483
Fichier:
PDF, 256 KB
english, 2001