[IEEE 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Kuala Lumpur, Malaysia (2010.12.1-2010.12.3)] 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Growth of GaN on SiC/Si substrates using AlN buffer layer under low III/V source gas ratio by hot-mesh CVD
Nagata, Kazuki, Tamura, Kazuyuki, Suemitsu, Maki, Narita, Yuzuru, Ito, Takashi, Endoh, Tetsuo, Nakazawa, Hideki, Hashim, Abdul Manaf, Yasui, KanjiAnnée:
2010
Langue:
english
DOI:
10.1109/escinano.2010.5701027
Fichier:
PDF, 392 KB
english, 2010