Damage-Free Back Channel Wet-Etch Process in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer
Luo, Dongxiang, Zhao, Mingjie, Xu, Miao, Li, Min, Chen, Zikai, Wang, Lang, Zou, Jianhua, Tao, Hong, Wang, Lei, Peng, JunbiaoVolume:
6
Langue:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am501817y
Date:
July, 2014
Fichier:
PDF, 3.53 MB
english, 2014
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