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[IEEE 2010 International Symposium on Next-Generation Electronics (ISNE) - Kaohsiung, Taiwan (2010.11.18-2010.11.19)] 2010 International Symposium on Next Generation Electronics - The etching and annealing influences of front-contact ZnO:Ga on amorphous thin film silicon solar cells
Yang, Hung-Jen, Wu, Chien-Liang, Huang, Chian-Fu, Chen, Chun-Heng, Chen, Yi-Chan, Lee, Wen-ChengAnnée:
2010
Langue:
english
DOI:
10.1109/ISNE.2010.5669201
Fichier:
PDF, 436 KB
english, 2010