
[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection
Shiraishi, K., Akasaka, Y., Miyazaki, S., Nakayama, T., Nakaoka, T., Nakamura, G., Torii, K., Furutou, H., Ohta, A., Ahmet, P., Ohmori, K., Watanabe, H., Chikyo, T., Green, M.L., Nara, Y., Yamada, K.Année:
2005
Langue:
english
DOI:
10.1109/IEDM.2005.1609260
Fichier:
PDF, 1.52 MB
english, 2005