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Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy
T. Batten, J. W. Pomeroy, M. J. Uren, T. Martin, M. KuballVolume:
106
Année:
2009
Langue:
english
DOI:
10.1063/1.3254197
Fichier:
PDF, 277 KB
english, 2009