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Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control
Fasarakis, Nikolaos, Karatsori, Theano, Tassis, Dimitrios H., Theodorou, Christoforos G., Andrieu, Francois, Faynot, Olivier, Ghibaudo, Gerard, Dimitriadis, Charalabos A.Volume:
61
Langue:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2306015
Date:
April, 2014
Fichier:
PDF, 1.51 MB
english, 2014