Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
Ruvimov, Sergei, Liliental-Weber, Zuzanna, Suski, Tadeusz, Ager, Joel W., Washburn, Jack, Krueger, Joachim, Kisielowski, Christian, Weber, Eicke R., Amano, H., Akasaki, I.Volume:
69
Année:
1996
Langue:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.117105
Fichier:
PDF, 440 KB
english, 1996