Stabilized resistive switching behaviors of a Pt/TaO x /TiN RRAM under different oxygen contents
Jeon, Heeyoung, Park, Jingyu, Jang, Woochool, Kim, Hyunjung, Kang, Chunho, Song, Hyoseok, Kim, Honggi, Seo, Hyungtak, Jeon, HyeongtagVolume:
211
Langue:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201431260
Date:
September, 2014
Fichier:
PDF, 882 KB
english, 2014